2SC4208 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SC4208
30
base voltage 2SC4208A
V_CBO
60
V
Collector to 2SC4208
25
emitter voltage 2SC4208A
V_CEO
50
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
1
A
Collector current
I_C
500
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base 2SC4208
voltage
2SC4208A
Collector to emitter 2SC4208
voltage
2SC4208A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
min
V_CB = 20V, I_E = 0
30
I_C = 10µA, I_E = 0
60
25
I_C = 10mA, I_B = 0
50
I_E = 10µA, I_C = 0
7
V_CE = 10V, I_C = 150mA^*2
85
V_CE = 10V, I_B = 500mA^*2
40
I_C = 300mA, I_B = 30mA
I_C = 300mA, I_B = 30mA
V_CB = 10V, I_E = –50mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
typ max Unit
0.1
µA
V
V
V
340
0.35
0.6
V
1.1
1.5
V
150
MHz
6
15
pF
*2 _{Pulse measurement}
1