2SC4004 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
40
(1)
30
20
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P_C=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
1 T_C=–25˚C
25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
C_ob — V_CB
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
1.2
T_C=25˚C
1.0
I_B=140mA
120mA
0.8
100mA
80mA
60mA
0.6
40mA
0.4
20mA
0.2
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC4004
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
100˚C 25˚C
1
0.3
0.1 ^{TC=–25˚C}
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
h_FE — I_C
V_CB=5V
30
T_C=100˚C
10
–25˚C
25˚C
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=1MHz
T_C=25˚C
30
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(I_B1=–I_B2)
10
V_CC=200V
T_C=25˚C
3
t_stg
1
0.3
t_on
0.1
t_f
0.03
0.01
0
0.2
0.4
0.6
0.8
Collector current I_C (A)
Area of safe operation (ASO)
10
3
I_CP
1
I_C
0.3
0.1
Non repetitive pulse
T_C=25˚C
10ms
t=1ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2