2SC4004 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
900
V
V_CES
900
V
Collector to emitter voltage
V_CEO
800
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
2
A
Collector current
I_C
1
A
Base current
I_B
0.3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
5.08±0.5
1.7±0.2
1.05±0.1
0.8±0.1
2.54±0.3
1.3±0.2
+0.2
0.5–0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = 900V, I_E = 0
I_EBO
V_EB = 7V, I_C = 0
50
µA
50
µA
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
800
V
h_FE1
V_CE = 5V, I_C = 0.05A
6
Forward current transfer ratio
h_FE2
V_CE = 5V, I_C = 0.5A
3
Collector to emitter saturation voltage V_CE(sat)
I_C = 0.2A, I_B = 0.04A
1.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = 0.2A, I_B = 0.04A
1.0
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CE = 10V, I_C = 0.05A, f = 1MHz
t_on
I_C = 0.2A, I_B1 = 0.04A, I_B2 = – 0.04A,
t_stg
V_CC = 250V
t_f
4
MHz
1.0
µs
3.0
µs
1.0
µs
1