2SC3982 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
200
(1)
150
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=3.5W)
100
50
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
1 ^TC^{=–25˚C}
100˚C
0.3
25˚C
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
12
I_B=2A
10
T_C=25˚C
1A
8
0.5A
6
0.4A
0.3A
4
0.2A
2
0.1A
0.05A
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1000
300
h_FE — I_C
V_CE=5V
100
T_C=100˚C
30
25˚C
10
–25˚C
3
1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=200V
T_C=25˚C
3
t_stg
1
0.3
t_f
0.1
t_on
0.03
0.01
012345678
Collector current I_C (A)
2SC3982, 2SC3982A
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
25˚C
1
T_C=100˚C –25˚C
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
f_T — I_C
100
V_CE=5V
f=1MHz
30
T_C=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation (ASO)
100
30
I_CP
10
I_C
3
1
0.3
Non repetitive pulse
T_C=25˚C
t=0.1ms
0.5ms
1ms
10ms
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2