2SC3982 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3982
900
base voltage 2SC3982A
V_CBO
1000
V
Collector to 2SC3982
900
emitter voltage 2SC3982A
V_CES
1000
V
Collector to emitter voltage V_CEO
800
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
15
A
Collector current
I_C
10
A
Base current
I_B
5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
150
W
3.5
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SC3982
current
2SC3982A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 900V, I_E = 0
V_CB = 1000V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 4A
I_C = 4A, I_B = 0.8A
I_C = 4A, I_B = 0.8A
V_CE = 5V, I_C = 1A, f = 1MHz
I_C = 4A, I_B1 = 0.8A, I_B2 = –1.6A,
V_CC = 250V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min
typ
max Unit
50
µA
50
50
µA
800
V
8
6
1.5
V
1.5
V
15
MHz
0.7
µs
3.0
µs
0.3
µs
1