2SC3976 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
200
(1)
150
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=3.5W)
100
50
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
1
T_C=–25˚C
100˚C
25˚C
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
24
T_C=25˚C
20
16
I_B=700mA
600mA
500mA
12
400mA
300mA
8
200mA
100mA
4
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1000
300
100
h_FE — I_C
V_CE=5V
30
T_C=100˚C
–25˚C
10
25˚C
3
1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=200V
T_C=25˚C
3
t_stg
1
t_on
0.3
t_f
0.1
0.03
0.01
0
5
10
15
20
Collector current I_C (A)
2SC3976
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
1
0.3
0.1
0.03
T_C=100˚C
25˚C
–25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
f_T — I_C
100
V_CE=10V
f=1MHz
30
T_C=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation (ASO)
100
30 ^ICP
I_C
10
Non repetitive pulse
T_C=25˚C
t=0.5ms
1ms
10ms
3
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2