2SC3976 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC3976
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
800
V
V_CES
800
V
Collector to emitter voltage
V_CEO
500
V
Emitter to base voltage
V_EBO
8
V
Peak collector current
I_CP
25
A
Collector current
I_C
12
A
Base current
I_B
6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
150
W
3.5
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 800V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 7A
I_C = 7A, I_B = 1.4A
I_C = 7A, I_B = 1.4A
V_CE = 10V, I_C = 1A, f = 1MHz
I_C = 7A, I_B1 = 1.4A, I_B2 = –2.8A,
V_CC = 200V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min
typ
max Unit
100
µA
100
µA
500
V
15
8
1.0
V
1.5
V
15
MHz
1.0
µs
3.0
µs
0.3
µs
1