2SC3941 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

Transistor
P_C — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — I_B
120
V_CE=10V
Ta=25˚C
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base current I_B (mA)
h_FE — I_C
360
V_CE=10V
300
240
180
Ta=75˚C
120
25˚C
–25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
I_C — V_CE
120
1.8mA
Ta=25˚C
1.6mA
100
1.4mA
I_B=2mA
1.2mA
1.0mA
80 _0.8mA
0.6mA
60
0.4mA
40
0.2mA
20
0
0
0.4 0.8 1.2 1.6 2.0
Collector to emitter voltage V_CE (V)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
f_T — I_E
160
V_CB=10V
Ta=25˚C
140
120
100
80
60
40
20
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
2SC3941
I_C — V_BE
120
V_CE=10V
25˚C
100
Ta=75˚C –25˚C
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
I_B — V_BE
3.0
V_CE=10V
Ta=25˚C
2.5
2.0
1.5
1.0
0.5
0
0
0.2 0.4 0.6 0.8 1.0
Base to emitter voltage V_BE (V)
C_ob — V_CB
10
I_E=0
f=1MHz
Ta=25˚C
8
6
4
2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
2