2SC3941 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

Transistor
2SC3941
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SB1221
s ^Features
q High collector to emitter voltage V_CEO.
q High transition frequency f_T.
q Allowing supply with the radial taping.
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
300
V
Collector to emitter voltage V_CEO
300
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
100
mA
Collector current
I_C
70
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
V_CEO
V_EBO
h_FE*
V_CB = 100V, I_E = 0
I_C = 100µA, I_B = 0
I_E = 1µA, I_C = 0
V_CB = 10V, I_C = 5mA
2
µA
300
V
7
V
30
220
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
I_C = 50mA, I_B = 5mA
V_CB = 10V, I_E = –10mA, f = 200MHz
50
1.2
V
80
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
4
8
pF
*_{hFE Rank classification}
Rank
P
h_FE
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1