2SC3935 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Transistor
P_C — Ta
200
T_C=Ta
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
1.6
I_E=0
1.4
f=1MHz
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
80
Ta=25˚C
70
60
50
I_B=500µA
40
400µA
300µA
30
200µA
20
100µA
10
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
h_FE — I_C
360
V_CE=4V
300
Ta=75˚C
240
180
25˚C
120
–25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
2SC3935
I_C — V_BE
60
25˚C
V_CE=4V
50
Ta=75˚C –25˚C
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_E
4.0
V_CB=4V
Ta=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
2