2SC3935 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Transistor
2SC3935
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob and common base reverse
transfer capacitance C_rb.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage
V_CEO
10
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 1S
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
I_CEO
V_CE = 10V, I_B = 0
1
µA
10
µA
Collector to emitter voltage
V_CEO
I_C = 2mA, I_B = 0
10
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
V
h_FE1
Forward current transfer ratio
h_FE2
V_CE = 2.4V, I_C = 7.2mA
V_CE = 2.4V, I_C = 100µA
75
220
75
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 4mA
0.5
V
Transition frequency
f_T
V_CE = 2.4V, I_C = 7.2mA, f = 200MHz
1.4
1.9
2.5 GHz
Collector output capacitance
C_ob
V_CB = 4V, I_E = 0, f = 1MHz
0.9
1.1
pF
Common emitter reverse transfer capacitance C_rb
V_CB = 4V, I_E = 0, f = 1MHz
0.25 0.35
pF
Base time constant
h_FE ratio
r_bb' · C_C
V_CB = 4V, I_E = –5mA, f = 31.9MHz
11.8 13.5
ps
h_FE(RATIO)
V_CE = 2.4V, I_C = 100µA
V_CE = 2.4V, I_C = 7.2mA
0.75
1.6
*1_{hFE Rank classification}
Rank
P
Q
h_FE
75 ~ 130 110 ~ 220
1