2SC3934 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency wide-band low-noise amplification)

Transistor
P_C — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
0.1 _25˚C
Ta=75˚C
0.03
–25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
1.2
I_E=0
f=1MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
30
Ta=25˚C
25
I_B=300µA
20
15
250µA
200µA
10
150µA
100µA
5
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC3934
I_C — V_BE
60
V_CE=10V
25˚C
50
Ta=75˚C –25˚C
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
h_FE — I_C
240
V_CE=10V
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
f_T — I_C
8
Ta=25˚C
7
V_CE=10V
6
5
4
3
2
1
0
–1
–3
–10
–30
–100
Collector current I_C (mA)
NF — I_C
S₁₁, S₂₂
8
7
R_g=50Ω
V_CE=10V
0.8
1
1.5
2
V_CE=10V
I_C=20mA
E: Earth
f=800MHz
0.4
3
6
4
0.2
5
5
10
4
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
800MHz ^1000MHz
3
500MHz
S₁₁
1000MHz
S₂₂
800MHz
500MHz
–10
2
– 0.2
–5
–4
1
– 0.4
–3
0
1
3
10
30
100
Collector current I_C (mA)
– 0.6
– 0.8
–1
–2
–1.5
2