2SC3934 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency wide-band low-noise amplification)

Transistor
2SC3934
Silicon NPN epitaxial planer type
For high-frequency wide-band low-noise amplification
s ^Features
q High transition frequency f_T.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
12
V
Emitter to base voltage
V_EBO
2.5
V
Peak collector current
I_CP
50
mA
Collector current
I_C
30
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 1U
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
I_EBO
V_CB = 10V, I_E = 0
V_EB = 2V, I_C = 0
100
µA
1
µA
Forward current transfer ratio
h_FE
V_CE = 10V, I_C = 10mA
40
Transition frequency
f_T
V_CE = 10V, I_C = 10mA, f = 800MHz
4.5
GHz
Collector output capacitance
Foward transfer gain
C_ob
| S_21e |²
V_CB = 10V, I_E = 0, f = 1MHz
V_CE = 10V, I_C = 20mA, f = 800MHz
9
1.2
pF
12
dB
Maximum unilateral power gain GUM
V_CE = 10V, I_C = 20mA, f = 800MHz
12
14
dB
Noise figure
NF
V_CE = 10V, I_C = 5mA, f = 800MHz
1.3
2.5
dB
1