2SC3904 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

Transistor
P_C — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
10
I_C/I_B=10
3
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
1.2
I_E=0
f=1MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
30
Ta=25˚C
25
I_B=250µA
20
200µA
15
150µA
10
100µA
5
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
h_FE — I_C
240
V_CE=8V
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
GUM — I_C
12
V_CE=8V
f=1.5GHz
Ta=25˚C
10
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
2SC3904
I_C — V_BE
120
V_CE=8V
100
25˚C
80
Ta=75˚C
–25˚C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage V_BE (V)
f_T — I_C
12
V_CB=8V
f=1.5GHz
Ta=25˚C
10
8
6
4
2
0
1
3
10
30
100
Collector current I_C (mA)
NF — I_C
6
V_CE=8V
f=1.5GHz
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
2