2SC3904 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)

Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
s ^Features
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
65
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 3S
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I_CBO
I_EBO
h_FE
f_T
C_ob
| S_21e |²
GUM
NF
Conditions
V_CB = 10V, I_E = 0
V_EB = 1V, I_C = 0
V_CE = 8V, I_C = 20mA
V_CE = 8V, I_C = 20mA, f = 0.8GHz
V_CB = 10V, I_E = 0, f = 1MHz
V_CE = 8V, I_C = 20mA, f = 1.5GHz
V_CE = 8V, I_C = 20mA, f = 1.5GHz
V_CE = 8V, I_C = 7mA, f = 1.5GHz
min
typ
max Unit
1
µA
1
µA
50
120 300
7.0
8.5
GHz
0.6
1
pF
7
9
dB
10
dB
2.2
3
dB
1