2SC3868 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
40
35
30
(1)
25
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=2.0W)
20
15
(2)
10
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
I_C/I_B=5
10
3
25˚C
1
0.3
0.1
T_C=–25˚C
100˚C
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage V_CB (V)
I_C — V_CE
2.0
T_C=25˚C
1.8
I_B=200mA
1.6
1.4
120mA
1.2
100mA
80mA
1.0
60mA
0.8
40mA
0.6
30mA
0.4
20mA
0.2
10mA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SC3868
V_CE(sat) — I_C
10
I_C/I_B=5
3
T_C=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current I_C (A)
1000
300
h_FE — I_C
V_CE=5V
100
25˚C
T_C=100˚C
30
–25˚C
10
3
1
0.01 0.03 0.1 0.3
1
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=10MHz
T_C=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=150V
T_C=25˚C
3
t_on
1
0.3
t_stg
0.1
t_f
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5
Collector current I_C (A)
Area of safe operation (ASO)
10
3 ^ICP
1 IC
0.3
Non repetitive pulse
T_C=25˚C
t=0.5ms
1ms
10ms
DC
0.1
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2