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| 2SC3868 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Power Transistors
2SC3868
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCES
500
V
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
3
A
Collector current
IC
Base current
IB
Collector power TC=25°C
dissipation
Ta=25°C
PC
1.5
A
0.5
A
25
W
2
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
ICBO
VCB = 500V, IE = 0
IEBO
VEB = 5V, IC = 0
100
µA
100
µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
V
Forward current transfer ratio
hFE1
VCE = 5V, IC = 0.1A
15
hFE2
VCE = 5V, IC = 0.8A
8
Collector to emitter saturation voltage VCE(sat)
IC = 0.8A, IB = 0.16A
1
V
Base to emitter saturation voltage VBE(sat)
IC = 0.8A, IB = 0.16A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.2A, f = 10MHz
25
MHz
Turn-on time
Storage time
Fall time
ton
IC = 0.8A, IB1 = 0.16A, IB2 = â 0.32A,
tstg
tf
VCC = 150V
0.7
µs
2
µs
0.3
µs
1
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