2SC2497 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-frequency power amplification)

Power Transistors
2SC2497, 2SC2497A
P_C  T_a
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
1
(2)
0
0
40
80
120 160
Ambient temperature T_a (˚C)
I_C  V_CE
4.0
TC=25˚C
3.5
3.0
IB=50mA
45mA
2.5
40mA
35mA
2.0
30mA
25mA
1.5
20mA
15mA
1.0
10mA
0.5
5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
V_CE(sat)  I_C
IC/IB=10
10
3
1
0.3
TC=100˚C
25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
V_BE(sat)  I_C
IC/IB=10
10
3
1
TC=–25˚C
100˚C
0.3
25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
1000
h_FE  I_C
VCE=5V
300
TC=100˚C
100
–25˚C
30
25˚C
10
3
1
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
f_T  I_E
240
VCB=5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Emitter current I_E (A)
C_ob  V_CB
240
IE=0
f=1MHz
TC=25˚C
200
160
120
80
40
0
1
3
10
30
100
Collector to base voltage V_CB (V)
V_CER  R_BE
100
IC=10mA
90
TC=25˚C
80
70
60
50
40
30
20
10
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance R_BE (kΩ)
I_CBO  T_a
10⁴
VCB=40V
10³
10²
10
1
0 20 40 60 80 100 120 140 160 180
Ambient temperature T_a (˚C)
189