2SC2497 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-frequency power amplification)

Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
8.0⁺_–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Features
• High collector to emitter voltage V_CEO
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
70
V
Collector to
2SC2497
V_CEO
50
V
emitter voltage 2SC2497A
60
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
3
A
Collector current
I_C
1.5
A
Collector power dissipation
P_C
1.2 ^*1
W
5 ^*2
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1 : Emitter
123
2 : Collector
3 : Base
TO-126B-A1 Package
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
I_CBO
V_CB = 20 V, I_E = 0
I_CEO
V_CE = 10 V, I_B = 0
Emitter cutoff current
I_EBO
V_EB = 5 V, I_C = 0
Collector to base voltage
V_CBO
I_C = 1 mA, I_E = 0
70
Collector to emitter 2SC2497
V_CEO
I_C = 2 mA, I_B = 0
50
voltage
2SC2497A
60
Forward current transfer ratio ^*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CE = 5 V, I_C = 1 A
80
I_C = 1.5 A, I_B = 0.15 A
I_C = 1.5 A, I_B = 0.15 A
V_CB = 5 V, I_E = − 0.5 A, f = 200 MHz
V_CB = 20 V, I_E = 0, f = 1 MHz
Note) *: Rank classification
Rank
R
S
h_FE
80 to 160 120 to 220
Typ Max
1
100
10
220
1
1.5
150
35
Unit
µA
µA
µA
V
V
V
V
MHz
pF
188