2SC2480 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

2SC2480
Transistors
P_C  T_a
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
24
Ta = 25°C
IB = 300 µA
20
250 µA
16
200 µA
12
150 µA
8
100 µA
4
50 µA
0
0 2 4 6 8 10 12 14 16 18
Collector to emitter voltage V_CE (V)
I_B  V_BE
400
VCE = 10 V
350
Ta = 25°C
300
250
200
150
100
50
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
I_C  V_BE
60
25°C
VCE = 10 V
50
Ta = 75°C
−25°C
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
V_CE(sat)  I_C
100
IC / IB = 10
30
10
3
1
0.3
Ta = 75°C
25°C
0.1
–25°C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
1 600
1 400
f_T  I_E
V_CB = 10 V
T_a = 25°C
1 200
1 000
800
600
400
200
0
− 0.1 − 0.3 −1 −3 −10 −30 −100
Emitter current I_E (mA)
I_C  I_B
24
VCE = 10 V
Ta = 25°C
20
16
12
8
4
0
0 100 200 300 400 500
Base current I_B (µA)
h_FE  I_C
240
VCE = 10 V
200
160
Ta = 75°C
120
25°C
−25°C
80
40
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_re  V_CE
2.4
IC = 1 mA
f = 10.7 MHz
2.0
Ta = 25°C
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage V_CE (V)
2