2SC2480 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Transistors
2SC2480
Silicon NPN epitaxial planer type
For high-frequency amplification / oscillation / mixing
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
I Features
• High transition frequency f_T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
30
V
V_CEO
20
V
V_EBO
3
V
I_C
50
mA
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10°
1: Base
2: Emitter
3: Collector
Marking Symbol: R
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency ^*
Common emitter reverse transfer
capacitance
Power gain
Note) *: Rank classification
Symbol
V_CBO
V_EBO
h_FE
V_BE
f_T
C_re
C_rb
PG
Conditions
Min
I_C = 100 µA, I_E = 0
30
I_E = 10 µA, I_C = 0
3
V_CB = 10 V, I_E = −2 mA
25
V_CB = 10 V, I_E = −2 mA
V_CB = 10 V, I_E = −15 mA, f = 200 MHz 800
V_CB = 10 V, I_E = −1 mA, f = 10.7 MHz
V_CE= 6 V, I_C = 0, f = 1 MHz
V_CB = 10 V, I_E = −1 mA, f = 200 MHz
Rank
T
S
No-rank
f_T (MHz)
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Typ Max
720
1 300
1
0.8
20
250
1 600
1.5
Unit
V
V
mV
MHz
pF
pF
dB
1