2SC2405 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
P_C — Ta
250
225
200
175
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_BE
120
25˚C
V_CE=5V
100
Ta=75˚C –25˚C
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_E
500
V_CB=5V
450
Ta=25˚C
400
350
300
250
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
I_C — V_CE
160
Ta=25˚C
140
120
I_B=350µA
300µA
100
250µA
80
200µA
60
150µA
100µA
40
02
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC2405, 2SC2406
I_C — I_B
160
V_CE=5V
Ta=25˚C
140
120
100
80
60
40
20
0
0
0.1 0.2 0.3 0.4 0.5
Base current I_B (mA)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
Ta=75˚C
0.1
25˚C
0.03
–25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
10
I_E=0
9
f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage V_CB (V)
h_FE — I_C
1000
900
V_CE=5V
800
700
600
500
Ta=75˚C
400
25˚C
–25˚C
300
200
100
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
NV — V_CE
160
I_C=1mA
140
G_V=80dB
Function=FLAT
120
R_g=100kΩ
100
80
60
22kΩ
40
4.7kΩ
20
0
1
3
10
30
100
Collector to emitter voltage V_CE (V)
2