2SC2405 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SC2405, 2SC2406
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Unit
Collector to 2SC2405
35
base voltage 2SC2406
V_CBO
55
V
Collector to 2SC2405
35
emitter voltage 2SC2406
V_CEO
55
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : S^(2SC2405)
T^(2SC2406)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SC2405
2SC2406
I_CBO
I_CEO
V_CBO
V_CB = 10V, I_E = 0
V_CE = 10V, I_B = 0
I_C = 10µA, I_E = 0
100
nA
1
µA
35
V
55
Collector to emitter 2SC2405
35
V_CEO
I_C = 2mA, I_B = 0
V
voltage
2SC2406
55
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*_{hFE Rank classification}
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
NV
I_E = 10µA, I_C = 0
5
V
V_CB = 5V, I_E = –2mA
180
700
I_C = 100mA, I_B = 10mA
0.6
V
V_CE = 1V, I_C = 100mA
0.7
1
V
V_CB = 5V, I_E = –2mA, f = 200MHz
200
MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
110
mV
Rank
R
S
T
h_FE
Marking ^2SC2405
Symbol 2SC2406
180 ~ 360
SR
TR
260 ~ 520
SS
TS
360 ~ 700
ST
TT
1