2SC1980 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
P_C — Ta
500
450
400
350
300
250
200
150
100
50
0
0
40 80 120 160 200
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
8
I_E=0
7
f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
24
Ta=25˚C
20
I_B=50µA
45µA
40µA
16
35µA
30µA
12
25µA
20µA
8
15µA
4
10µA
5µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1200
1000
h_FE — I_C
V_CE=10V
800
Ta=75˚C
600
25˚C
–25˚C
400
200
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
NV — I_C
160
V_CE=10V
140
G_V=80dB
Function=FLAT
120
100
80
R_g=100kΩ
60
22kΩ
40
4.7kΩ
20
0
0.01 0.03
0.1
0.3
1
Collector current I_C (mA)
2SC1980
I_C — V_BE
60
V_CE=10V
25˚C
50
Ta=75˚C
40
–25˚C
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_E
800
V_CB=5V
Ta=25˚C
700
600
500
400
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
2