2SC1980 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SA921
s ^Features
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
120
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
50
mA
Collector current
I_C
20
mA
Collector power dissipation
P_C
250
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 50_V, I_E = 0
V_CE = 50V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
120
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 5V, I_C = 2mA
120
V
7
V
180
700
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 2mA
0.6
V
Transition frequency
f_T
V_CB = 5V, I_E = –2mA, f = 200MHz
200
MHz
Noise voltage
V_CE = 40V, I_C = 1mA, G_V = 80dB
NV
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1