2SB1071 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

2SB1071, 2SB1071A
P_C  T_a
40
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
30
(1)
20
10
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature T_a (°C)
I_C  V_CE
−6
IB=–80mA
TC=25˚C
−5
–50mA
–45mA
−4
–40mA
–35mA
–30mA
−3
–25mA
–20mA
−2
–15mA
–10mA
−1
–5mA
0
0
−2 −4 −6 −8 −10
Collector-emitter voltage V_CE (V)
−100
−10
−1
V_CE(sat)  I_C
IC/IB=20
TC=100˚C
25˚C
–25˚C
− 0.1
− 0.01
− 0.01
− 0.1
−1
−10
Collector current I_C (A)
V_BE(sat)  I_C
−100
IC/IB=20
−10
TC=–25˚C
25˚C
100˚C
−1
−1 000
−100
−10
h_FE  I_C
TC=100˚C
25˚C
VCE=–2V
–25˚C
1 000
100
10
f_T  I_C
VCE=–2V
f=10MHz
TC=25˚C
− 0.1
−1
1
− 0.01
− 0.01
− 0.1
−1
−10
Collector current I_C (A)
− 0.1
− 0.01
− 0.1
−1
−10
Collector current I_C (A)
0.1
− 0.01
− 0.1
−1
−10
Collector current I_C (A)
t_on , t_stg , t_f  I_C
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–20V
TC=25˚C
1
ton
tstg
0.1
tf
Safe operation area
−100
Non repetitive pulse
TC=25˚C
−10 ICP
IC
t=1ms
−1
t=300ms
t=10ms
− 0.1
0.01
0
−2
−4
−6
−8
Collector current I_C (A)
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage V_CE (V)
2
SJD00041AED