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2SB1071 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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Power Transistors
2SB1071, 2SB1071A
Silicon PNP epitaxial planar type
For low-voltage switching
â Features
⢠Low collector-emitter saturation voltage VCE(sat)
⢠High-speed switching
⢠Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï 3.1±0.1
â Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB1071 VCBO
â40
V
(Emitter open)
2SB1071A
â50
Collector-emitter voltage 2SB1071 VCEO
â20
V
(Base open)
2SB1071A
â40
Emitter-base voltage (Collector open) VEBO
â5
V
Collector current
IC
â4
A
Peak collector current
ICP
â8
A
Collector power dissipation
PC
25
W
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
1.4±0.1
0.8±0.1
1.3±0.2
0.5+â00..12
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
â Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1071 VCEO IC = â10 mA, IB = 0
â20
V
(Base open)
2SB1071A
â40
Collector-base cutoff
current (Emitter open)
2SB1071 ICBO
2SB1071A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = â40 V, IE = 0
VCB = â50 V, IE = 0
VEB = â5 V, IC = 0
VCE = â2 V, IC = â 0.1 A
VCE = â2 V, IC = â1 A
IC = â2 A, IB = â 0.1 A
IC = â2 A, IB = â 0.1 A
VCE = â5 V, IC = â 0.5 A, f = 10 MHz
IC = â2 A, IB1 = â 0.2 A, IB2 = 0.2 A
VCC = â20 V
â50 µA
â50
â50 µA
45

60
260
â 0.5 V
â1.5
V
150
MHz
0.3
µs
0.4
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180 130 to 260
Publication date: February 2003
SJD00041AED
1
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