2SB0792A Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
P_C — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
V_CE(sat) — I_C
I_C/I_B=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
C_ob — V_CB
10
I_E=0
9
f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage V_CB (V)
–100
–90
–80
–70
–60
–50
–40
–30
I_C — V_CE
Ta=25˚C
I_B=––190mmAA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–20
–1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage V_CE (V)
2SB792, SB792A
–120
–100
–80
I_C — V_BE
V_CE=–5V
25˚C
Ta=75˚C –25˚C
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage V_BE (V)
h_FE — I_C
600
V_CE=–5V
500
400
Ta=75˚C
300
25˚C
200
–25˚C
100
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
f_T — I_E
250
V_CB=–10V
225
Ta=25˚C
200
175
150
125
100
75
50
25
0
0.1 0.3 1 3 10 30 100
Emitter current I_E (mA)
2