2SB0792A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
Unit: mm
s ^Features
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
Parameter
Symbol
Ratings
Unit
Collector to 2SB792
–150
V_CBO
V
base voltage 2SB792A
–185
Collector to 2SB792
–150
emitter voltage 2SB792A
V_CEO
–185
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : I^(2SB792)
2F^(2SB792A)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter 2SB792
voltage
2SB792A
I_CBO
V_CEO
V_CB = –100V, I_E = 0
I_C = –100µA, I_B = 0
–150
–185
–1
µA
V
Emitter to base voltage
Forward current
2SB792
transfer ratio
2SB792A
V_EBO
h_FE*
I_E = –10µA, I_C = 0
V_CE = –5V, I_C = –10mA
–5
V
130
450
130
330
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
Noise voltage
NV
I_C = –30µA, I_B = –3mA
V_CB = –10V, I_E = 10mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
V_CE = –10V, I_C = –1mA, G_V = 80dB,
R_g = 100kΩ, Function = FLAT
–1
V
200
MHz
4
pF
150
mV
*_{hFE Rank classification}
Rank
R
S
T
h_FE
Marking ^2SB792
Symbol
2SB792A
130 ~ 220
IR
2FR
185 ~ 330
IS
2FS
260 ~ 450
IT
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1