2SB0642 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

2SB0642
P_C  T_a
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
I_C  V_CE
−60
Ta = 25°C
−50
IB = −300 µA
−250 µA
−40
−200 µA
−30
−150 µA
−20
−100 µA
−10
−50 µA
0
0
−4 −8 −12 −16 −20
Collector-emitter voltage V_CE (V)
I_C  I_B
−60
V_CE = −5 V
T_a = 25°C
−50
−40
−30
−20
−10
0
0
−150
−300
−450
Base current I_B (µA)
−400
−350
I_B  V_BE
VCE = −5 V
Ta = 25°C
−300
−250
−200
−150
−100
−50
0
0
− 0.6
− 1.2
−1.8
Base-emitter voltage V_BE (V)
−240
−200
−160
I_C  V_BE
VCE = −5 V
25°C
Ta = 75°C −25°C
−120
−80
−40
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage V_BE (V)
−10
−1
− 0.1
V_CE(sat)  I_C
IC / IB = 10
Ta = 75°C
25°C
−25°C
− 0.01
− 0.001
−1
−10
−100
−1 000
Collector current I_C (mA)
h_FE  I_C
600
VCE = −10 V
500
400
Ta = 75°C
300
25°C
−25°C
200
100
0
−1
−10
−100
−1 000
Collector current I_C (mA)
f_T  I_E
160
VCB = −10 V
Ta = 25°C
140
120
100
80
60
40
20
0
0.1
1
10
100
Emitter current I_E (mA)
C_ob  V_CB
8
IE = 0
f = 1 MHz
7
Ta = 25°C
6
5
4
3
2
1
0
−1
−10
−100
Collector-base voltage V_CB (V)
2
SJC00045BED