2SB0642 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SB0642 (2SB642)
Silicon PNP epitaxial planar type
For low-power general amplification
■ Features
• High forward current transfer ratio h_FE
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation
P_C
400
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −20 V, I_E = 0
V_CE = −20 V, I_B = 0
V_CE = −10 V, I_C = −2 mA
I_C = −100 mA, I_B = −10 mA
V_CB = −10 V, I_E = 2 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
−60
V
−50
V
−7
V
−1
µA
−1
µA
160
460

−1
V
80
MHz
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
S
h_FE1
160 to 260 210 to 340 290 to 460
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00045BED
1