ERZV05D180 Datasheet, PDF (19/19 Pages) Panasonic Semiconductor – ZNR Transient/Surge Absorbers

“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV20D820 to ERZV20D511
2000
1000
900
800
700
600
500
400
300
Max.
Leakage Current
471
431
391
361
511
Max. Clamping Voltage
ERZV20D820 to ERZV20D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
511
up to 10⁶ times :10 sec. interval
471
431
391
361
331
271
241
221
201
151
1000
100
101₆^{01T50iT1m4i0mTe1i3mse0Tsi12emT0siemT2siemTsiemses}
121
101
10
820
200
271
210511
100
90
121
80
101
70
60
820
50
241
331
40
221
30
10^-6
10^-5
10^-4
10^-3
10^-2
ERZV20D621 to ERZV20D182
5000
4000
Max.
Leakage Current
10^-1 10⁰
Current (A)
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
10¹
10² 10³
10⁴
10⁵
Max. Clamping Voltage
182
1
20
100
1000
10000
Impulse Width (µs)
ERZV20D621 to ERZV20D112
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
100
101₆^{01T50iT1m40imeT13is0emT1si2me0Ts2ieTmsTimeimseess}
10
3000
102
911
821
2000
112
1
20
100
1000
10000
102
911
Impulse Width (µs)
821
751
681
621
ERZV20D182
182
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
900
800
112
700
600
500
400
621
300
751
681
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
200
10^-6
10^-5 10^-4 10^-3
10^-2
10^-1
10⁰
10¹
10² 10³
10⁴ 10⁵
Current (A)
1000
100
1010₅^1T04_iTm^{31iTm0eim21esT0seimsT2iemTsimeses}
10 _{6 Times}
10
1
20
100
1000
Impulse Width (µs)
10000
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
– 318 –
00 Sep. 2010