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ERZV05D180 Datasheet, PDF (13/19 Pages) Panasonic Semiconductor – ZNR Transient/Surge Absorbers
◁
“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV10D820 to ERZV10D511
2000
Max.
Leakage Current
1000
471
900
800
431
391
361
700
600
500
400
511
300
Max. Clamping Voltage
511
471
431
391
361
331
271
241
221
201
151
121
101
820
200
271
241
201
151
100
90
121
80
101
70
60
820
50
40
30
10-6
331
221
10-5
10-4 10-3 10-2
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 µs
101
102
103
104
105
ERZV10D621 to ERZV10D182CS
5000
4000
Max.
Leakage Current
Max. Clamping Voltage
182CS
ERZV10D820 to ERZV10D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
1000
100
111001004315TT20TiTimmiTimmieemeessesss
10
10 6 Times
1
20
100
1000
10000
Impulse Width (µs)
ERZV10D621 to ERZV10D112
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
1000
100 1111000034T51TTimiim20meTeessTsimimeess
10
10 6 Times
3000
102
911
112
821
102
911
821
2000
751
681
182CS
621
1000
900
800
112
700
600
500
400
621
300
751
681
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 µs
200
10-6 10-5 10-4 10-3 10-2 10-1 100
101
102
103
104
105
Current (A)
1
20
100
1000
10000
Impulse Width (µs)
ERZV10D182CS
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
1000
2 Times
100 10 14T0im3eTsim10e5s1T0im21eTs0imTiemses
10
10 6 Times
1
20
100
1000
10000
Impulse Width (µs)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
– 312 –
00 Sep. 2010
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