DB2460100L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Doc No. TT4-EA-13068
Revision. 2
DB2460100L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage VF
 Forward current (Average) IF(AV) = 3 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: A6
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
60
V
Maximum peak reverse voltage
VRM
60
V
Forward current ^*1
IF
3.0
A
Non-repetitive peak forward surge current ^*2 IFSM
50
A
Junction temperature ^*1
Tj
150
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +150 °C
Note: *1 Tl = 80 °C
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Product Standards
Schottky Barrier Diode
DB2460100L
2.4
2
Unit: mm
0.15
1
1.75
0.85
1. Cathode
2. Anode
Panasonic
JEITA
Code
TMiniP2-F2-B
SC-110A
―
Internal Connection
2
1
Established : 2011-03-09
Revised : 2013-04-20
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