CNZ1414A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Integrated Photosensor

Integrated Photosensors
CNZ1414A
Integrated Photosensor
Overview
CNZ1414A is ultraminiature, highly reliable transmissive
photosensor that has a high efficiency GaAs infrared light emitting
diode chip and a low voltage operation type high sensitivity Si-
integrated-photodetector chip wich are in a double molded resin
package.
Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V_CC = 2.2 to 7 V, I_CCL =0.8 mA typ.)
Fast response : t_PHL = 3 µs, t_PLH = 8 µs (typ.)
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Output current
I_O
8
mA
Output
Output voltage
V_O
12
V
(Photo IC) Supply voltage
V_CC
7
V
Power dissipation
P_C*2
80
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 40 to +100 ˚C
*1 _{Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.}
*2 _{Output power derating ratio is 1.07 mW/˚C at Ta ≥ 25˚C.}
Pin Connection
CNZ1414A
(Normally ON type)
Device
center
A
A'
,,,,^{(0.3) Unit : mm}
SEC. A-A'
4.2±0.1
4.2
1.2
0.5
+0.15
–0
(R0.1)
3.0±0.05
(2-C0.3)
(2-C0.3) ^{2-ø0.8±0.05}
2-0.25
Gate the rest
*3.2 ^{0.3 max.}
3-0.5
*2-1.27
1
3
1: Anode 4: V_O
4
2: Cathode 5: GND
2
5
3: V_CC
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Anode 1
Cathode 2
Const. Voltage Cir.
3 V_CC
4 V_O
5 GND
1