CNZ1413 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Integrated Photosensors

Integrated Photosensors
CNZ1413
Integrated Photosensors
Overview
CNZ1413 are ultraminiature, highly reliable transmissive
photosensors consisting of a high-efficiency GaAs infrared light
emitting diode chip that is integrated with a high-sensitivity Si-
integrated-photodetector chip in a double molded resin package.
Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
Fast response : t_PHL = 2.5µs, t_PLH = 6 µs (typ.) (ON1413A)
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Output current
I_O
20
mA
Output
(Photo IC)
Output voltage
Supply voltage
Power dissipation
V_O
30
V
V_CC
17
V
P_C*2
200
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 40 to +100 ˚C
*1 _{Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.}
*2 _{Output power derating ratio is 2.67 mW/˚C at Ta ≥ 25˚C.}
Pin Connection
CNZ1413
(Normally ON type)
Device
center
A
A'
,,,,^{(0.3) Unit : mm}
SEC. A-A'
4.2±0.1
4.2
1.2
0.5
+0.15
–0
(R0.1)
3.0±0.05
(2-C0.3)
(2-C0.3) ^{2-ø0.8±0.05}
2-0.25
Gate the rest
*3.2 ^{0.3 max.}
3-0.5
*2-1.27
1
3
1: Anode 4: V_O
4
2: Cathode 5: GND
2
5
3: V_CC
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Anode 1
Cathode 2
Const. Voltage Cir.
3 V_CC
4 V_O
5 GND
1