ES2A Datasheet, PDF (2/2 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

ES2A thru ES2J
SURFACE MOUNT SUPERFAST RECTIFIER
RATING AND CHARACTERISTICS CURVES ES2A THRU ES2J
FIG.1-MAXIMU MFO RWARDCURREN TDER ATING
CURVE
3.0
RESISTIVEOR
INDUCTIVELOAD
0.2X0.2"(5.0X5.0mm)
COPPER PADAREAS
2.0
1.0
0
80
90
100
110
120
130
140
150
O
LEADTEMPER ATURE. ( C)
FIG.3-MAXIMU MNON-REPETITIV EPEA KFO RWARD
SURGECURRENT
60
8.3msSingl eHal fSin e Wave
o
(JEDECMethod ) at TL=120 C
50
40
30
20
10
0
1
10
100
NUMBER OFCYCLE S AT60Hz
FIG.4-TYPICA LJUNCTIO NCA PACITANCE
60
Tj=25⁰C
f=1.0MHz
50
Vsig=50mVp-p
40
30
ES2A
-D
20
ES2F _-J
10
0
0
1
10
100
REVERSEVO LTAGE.(V)
FIG.2-TYPICA LREVERS ECHARACTERISTICS
1000
100
Tj=125⁰C
10
Tj=85⁰C
1
Tj=25⁰C
0.1
0.01
0
20
40
60 80 100 120 140
PERCENT OF RATEDPEA KREVERS EVO LTAGE.(%)
FIG.5-TYPICA LINS TANTANEOUS
FORWARDCHARACTERISTICS
60
Tj=25⁰C
PULSE WIDTH-300 S
1% DUTY CYCLE
10
1
0.1
0.01
0.6 0.8 1.0 1.2
1.4 1.6 1.8
FORWARDVO LTAGE.(V)
FIG.6-REVERS ERECOVE RYTIM ECHARACTERISTI CAN DTES TCIRCUI TDIAGRAM
50
10
NONINDUCTIVE NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
OSCILLOSCOPE
NON
(NOTE1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES: 1.Ris e Time=7nsmax .Inpu tImpedance=
1megoh m22pf
2.Ris e Time=10nsmax .Sours eImpedance=
50ohms
-1.0A
1cm
SETTIM EBAS EFOR
5/10ns / cm
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