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BPX38-2-3 Datasheet, PDF (4/11 Pages) OSRAM GmbH – Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1
Version 1.1
BPX 38
Grouping (TA = 25 °C, λ = 950 nm)
Gruppierung
Group
Min Photocurrent Max
Photocurrent
Gruppe
Min Fotostrom Max Fotostrom
BPX 38-2
BPX 38-3
BPX 38-4
BPX 38-5
Ee = 0.5 mW/cm2, Ee = 0.5 mW/cm2,
VCE = 5 V
VCE = 5 V
IPCE, min [µA]
200
320
500
800
IPCE, max [µA]
400
630
1000
Typ Photocurrent Rise and fall time
Typ Fotostrom
Anstiegs- und
Abfallzeit
EV = 1000 lx, Std.
Light A, VCE = 5 V
IPCE [µA]
950
IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ
tr, tf [µs]
9
1500
12
2300
15
3600
18
Group
Gruppe
BPX 38-2
BPX 38-3
BPX 38-4
BPX 38-5
Collector-emitter saturation
voltage
Kollektor-Emitter
Sättigungsspannung
IC = IPCEmin x 0.3,
Ee= 0.5 mW/cm2
VCEsat [mV]
200
200
200
200
Current gain
Stromverstärkung
Ee = 0.5 mW/cm2, VCE = 5 V
IPCE / IPCB
170
280
420
650
Note.: IPCEmin is the min. photocurrent of the specified group.
Anm.: IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
2014-01-14
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