OP910W Datasheet, PDF (2/2 Pages) OPTEK Technologies – PIN Silicon Photodiode

Type OP910W
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
SYMBOL
PARAMETER
I_L
Light Current
ID
Dark Current
V_(BR)R Reverse Voltage Breakdown
tr
Rise Time
tf
Fall Time
∅
Half Angle
CP
Capacitance
VF
Forward Voltage
MIN TYP MAX UNITS
TEST CONDITION
1.7 2.4
mA V_R = 20 V, E_e = .50 mW/cm² note 2, 3
1 10 nA VR = 20 V, Ee = 0.0
100
V I_R = 100 mA
10
nS VR = 20 V, RL = 50 OHMS
10
nS VR = 20 V, RL = 50 OHMS
+/-40
degr. IF = Constant
13
pF VR = 0 V, F = 1 Mhz, Ee = 0
1.2
V IF = 100 mA
Typical Performance Curves
Normalized Light Current vs.
Reverse Voltage
TA = 25^o C
λ= 935 nm
Total Capacitance vs.
Reverse Voltage
TA
Ee
=
=
025m^o WC/cm²
f = 1 MHz
Normalized Light and Dark
Current vs. Ambient Temperature
VR = 5 V
λ= 935 nm
NT_Aor=m2a5liz_oeCd to
Light Current
Dark Current
V_R - Reverse Voltage - V
V_R - Reverse Voltage - V
TA - Ambient Temperature - ^o C
Light Current vs. Irradiance
Switching Time Test Circuit
Light Current vs.
Angular Displacement
E_e - Irradiance - mW/cm²
q - Angular Displacement - Deg.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
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