OP604ESA-XN Datasheet, PDF (2/2 Pages) OPTEK Technologies – High Reliability NPN Silicon Phototransistor

Type OP604ESA-XN
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
Symbol
Parameter
IC(ON) On-State Collector Current
Collector Dark Current
ICEO
V_(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)ECO Emitter-Collector Breakdown Voltage
V_CE(SAT) Collector-Emitter Saturation Voltage
tr
Rise Time
t_f
Fall Time
Min Typ Max Units
Test Conditions
7.0
mA VCE = 5.0 V, Ee = 20 mW/cm^2(3)(4)
25
nA V_CE = 10.0 V, E_e = 0
100
µA ^{VCE = 30.0 V, Ee = 0, TA = 100o C}
50
V _{IC = 100 µA, Ee = 0}
7.0
V _{IE = 100 µA, Ee = 0}
0.40
V I_C = 0.4 mA, E_e = 20 mW/cm^2(3)(4)
20.0
20.0
µs ^{VCC = 30 V, IC = 1.00 mA,}
RL = 100 Ω
µs
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