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NSBA114EDXV6T1 Datasheet, PDF (9/11 Pages) ON Semiconductor – Dual Bias Resistor Transistors
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
1
1000
75°C
100
TA = −25°C
25°C
0.1
75°C
−25°C 25°C
10
IC/IB = 10
0.01
1
0
1
2
3
4
5
6
7
1
IC, COLLECTOR CURRENT (mA)
Figure 24. Maximum Collector Voltage versus
Collector Current
VCE = 10 V
10
100
IC, COLLECTOR CURRENT (mA)
Figure 25. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
IE = 0 V
TA = 25°C
10
20
30
40
50
60
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 26. Output Capacitance
100
25°C
75°C
10
TA = −25°C
1
VO = 5 V
0.1
01
23 45 67 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 27. Output Current versus Input Voltage
100
25°C
10
TA = −25°C
75°C
VO = 0.2 V
1
0 2 4 6 8 10 12 14 16 18 20
IC, COLLECTOR CURRENT (mA)
Figure 28. Input Voltage versus Output Current
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