NSBA114EDXV6T1 Datasheet, PDF (4/11 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ALL NSBA114EDXV6T1 SERIES DEVICES
300
250
200
150
100
50
R_qJA = 490°C/W
0
− 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve − ALL DEVICES
TYPICAL ELECTRICAL CHARACTERISTICS
— NSBA114EDXV6T1
1
I_C/I_B = 10
T_A = −25°C
0.1
25°C
75°C
0.01
0
20
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) versus I_C
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
1000
4
V_CE = 10 V
f = 1 MHz
l_E = 0 V
3
T_A = 25°C
T_A = 75°C
25°C
100
−25°C
2
1
10
0
1
10
100
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
25°C
10
T_A = −25°C
1
0.1
0.01
V_O = 5 V
0.001
0
1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = −25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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