MMBT3904WT1G Datasheet, PDF (9/13 Pages) ON Semiconductor – General Purpose Transistors

+10.6 V
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
< 1 ns
MMBT3906WT1, SMMBT3906WT1
3V
< 1 ns
+ 9.1 V
275
10 k
10 k
0
3V
275
300 ns
DUTY CYCLE = 2%
C_S < 4 pF*
10 < t₁ < 500 ms
t₁
DUTY CYCLE = 2%
10.9 V
1N916
C_S < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
500
300
200
100
70
50
30
20
10
7
5
1.0
TYPICAL TRANSIENT CHARACTERISTICS
MMBT3906WT1
I_C/I_B = 10
T_J = 25°C
T_J = 125°C
500
300
200
t_r @ V_CC = 3.0 V
15 V
40 V
2.0 V
t_d @ V_OB = 0 V
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 24. Turn −On Time
100
70
50
30
20
10
7
5
1.0
MMBT3906WT1
I_C/I_B = 20
V_CC = 40 V
I_B1 = I_B2
I_C/I_B = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V_CE = −5.0 Vdc, T_A = 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200 W
I_C = 1.0 mA
4.0
SOURCE RESISTANCE = 200 W
12
f = 1.0 kHz
10
I_C = 1.0 mA
I_C = 0.5 mA
I_C = 0.5 mA
8.0
3.0
SOURCE RESISTANCE = 2.0 k
I_C = 50 mA
6.0
2.0
4.0
I_C = 50 mA
1.0 ^{SOURCE RESISTANCE = 2.0 k}
I_C = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
MMBT3906WT1
10 20 40 100
2.0
0
0.1 0.2 0.4
1.0 2.0 4.0
I_C = 100 mA
MMBT3906WT1
10 20 40 100
f, FREQUENCY (kHz)
R_S, SOURCE RESISTANCE (kW)
Figure 26.
Figure 27.
www.onsemi.com
9