MMBT3904WT1G Datasheet, PDF (5/13 Pages) ON Semiconductor – General Purpose Transistors

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T_J = 25°C
T_J = 125°C
500
500
300
I_C/I_B = 10
300
V_CC = 40 V
200
200
I_C/I_B = 10
100
70
t_r @ V_CC = 3.0 V
50
30
20
40 V
10 MMBT3904WT1
7
t_d @ V_OB = 0 V
5
1.0 2.0 3.0 5.0 7.0 10 20 30
15 V
2.0 V
50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 3. Turn −On Time
500
300
200 ^{IC/IB = 20}
I_C/I_B = 10
t′_s = t_s - ¹/₈ t_f
I_B1 = I_B2
100
70
50
I_C/I_B = 20
30
I_C/I_B = 10
20
100
70
50
30
20
10
7
5
1.0
500
300
200
100
70
50
30
20
MMBT3904WT1
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 4. Rise Time
I_C/I_B = 20
V_CC = 40 V
I_B1 = I_B2
I_C/I_B = 10
10 _MMBT3904WT1
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
10
MMBT3904WT1
7
5
1.0 2.0 3.0 5.0 7.0 10
200
20 30 50 70 100
I_C, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V_CE = 5.0 Vdc, T_A = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
10
I_C = 1.0 mA
8
SOURCE RESISTANCE = 200 W
I_C = 0.5 mA
6
SOURCE RESISTANCE = 1.0 k
I_C = 50 mA
4
14
12 ^{f = 1.0 kHz IC = 1.0 mA}
10
I_C = 0.5 mA
8
6
4
I_C = 50 mA
I_C = 100 mA
2 _{SOURCE RESISTANCE = 500 W}
I_C = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
MMBT3904WT1
10 20 40 100
f, FREQUENCY (kHz)
Figure 7. Noise Figure
2
0
0.1 0.2
MMBT3904WT1
0.4 1.0 2.0 4.0 10 20 40 100
R_S, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
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