BUH100G Datasheet, PDF (9/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH100G
12
GAIN ≥ 5
T_C ≤ 125°C
10
L_C = 2 mH
8
6
4
-5 V
2
0 V -1.5 V
0
200 300
400
500
600
700
800
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 23. Reverse Bias Safe Operating Area
1
0.5
0.2
0.1
0.1
0.05
0.02
SINGLE PULSE
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
R_qJC(t) = r(t) R_qJC
R_qJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) R_qJC(t)
0.01
0.01
0.1
1
10
t, TIME (ms)
100
1000
Figure 24. Typical Thermal Response (Z_qJC(t)) for BUH100
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