BUH100G Datasheet, PDF (6/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH100G
TYPICAL SWITCHING CHARACTERISTICS
2500
I_B1 = I_B2
2000 ^{VCC = 300 V}
PW = 40 ms
1500
T_J = 125°C
T_J = 25°C
I_C/I_B = 10
1000
500
0
0
125°C
25°C
I_C/I_B = 5
2
4
6
8
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. Resistive Switching Time, t_on
10
T_J = 125°C
I_B1 = I_B2
8
T_J = 25°C
V_CC = 300 V
PW = 20 ms
6
I_C/I_B = 5
4
2
I_C/I_B = 10
0
0
2
4
6
8
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. Resistive Switch Time, t_off
7
I_C/I_B = 5
I_B1 = I_B2
V_CC = 15 V
V_Z = 300 V
5
L_C = 200 mH
3
T_J = 125°C
T_J = 25°C
1
1
4
7
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, t_si
6
5
I_C/I_B = 10
I_B1 = I_B2
V_CC = 15 V
V_Z = 300 V
4
L_C = 200 mH
3
2
1
T_J = 125°C
T_J = 25°C
0
1
4
7
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 13 Bis. Inductive Storage Time, t_si
600
I_B1 = I_B2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
400
200
T_J = 125°C
T_J = 25°C
t_c
t_fi
800
T_J = 125°C
T_J = 25°C
600
t_c
400
200
I_B1 = I_B2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
t_fi
0
1
4
7
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time,
t_c & t_fi @ I_C/I_B = 5
0
1
4
7
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
t_c & t_fi @ I_C/I_B = 10
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