LC898123F40XC_16 Datasheet, PDF (8/11 Pages) ON Semiconductor – Optical Image Stabilization (OIS) / Auto Focus (AF) Controller & Driver

LC898123F40XC
DC Characteristics : Input/Output level at AVSS = 0 V, DVSS = 0 V, PGND = 0 V,VDD = 2.6 to 3.6 V, Ta = 30 to +85C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Applicable Pin
High-level input
voltage
VIH
CMOS
1.36
V _{SCL2(TXD), SDA2(RXD),}
Low-level input
voltage
VIL
schmitt
0.39
V ^EXCLK
High-level input
voltage
VIH
CMOS
1.26
V _{DGDIN, DGSSB,}
Low-level input
voltage
VIL
schmitt
0.35
DGSCLK, DGDATA
High-level input
voltage
VIH
CMOS
1.40
Low-level input
voltage
VIL
schmitt
SCL, SDA
0.40
V
High-level input
voltage
VIH
CMOS
1.48
Low-level input
voltage
VIL
schmitt
EIRQ1, WPB
0.37
High-level input
voltage
VIH
CMOS
1.40
Low-level input
voltage
VIL
supported
MON1, MON2
0.51
High-level output
voltage
VOH
IOH = 2 mA
AVDD30
0.4
SCL2(TXD), SDA2(RXD),
V EXCLK, EIRQ1, MON1,
MON2
High-level output
voltage
VOH
IOH = 0.1 mA
1.32
V
DGDIN, DGSSB,
DGSCLK, DGDATA
SCL2(TXD), SDA2(RXD),
Low-level output
voltage
VOL
IOL = 2 mA
0.2
V
DGDIN, DGSSB,
DGSCLK, DGDATA,
EXCLK, SDA, SCL
Low-level output
voltage
VOL
IOL = 2 mA
0.4
V MON1,MON2,EIRQ1
Analog input
voltage
VAI
AVSS
AVDD30
OPINPX, OPINPY,
V OPINPAF, OPINMX,
OPINMY, OPINMAF
PullUp resistor
Rup
50
200
kΩ
MON1, MON2, EIRQ1,
SCL2(TXD), SD2(RXD)
PullUp resistor
Rup
180
800
kΩ
DGDATA, DGDIN,
DGSSB, DGSCLK
MON1, MON2, EIRQ1,
PullDown resistor Rdn
50
220
kΩ SCL2(TXD), SDA2(RXD),
EXCLK, WPB
PullDown resistor Rdn
120
500
kΩ
DGDATA, DGDIN,
DGSSB, DGSCLK
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Driver output at Ta = 30 to +85C, AVSS = 0 V, DVSS = 0 V, PGND = 0 V
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Output Current
OUT1 to OUT4
Full code
200
mA
Output Current
OUT5, OUT6
I_full
Full Code
OP-AF (bidirection / unidirection)
CL-AF
150
mA
Non-volatile Memory Characteristics
Parameter
Endurance
Data retention
Symbol
EN
RT
Condition
Min
Typ
Max
Unit
1000
Cycles
10
Years
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