SBC807-25LT1G Datasheet, PDF (7/10 Pages) ON Semiconductor – General Purpose Transistors

BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
TYPICAL CHARACTERISTICS − BC807−40LT1
1000
900
800 150°C
V_CE = 1 V
700
600
500 25°C
400
300 _{−55°C}
200
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain vs. Collector
Current
1.1
1.0
I_C/I_B = 10
0.9
0.8
0.7
−55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
1000
V_CE = 1 V
T_A = 25°C
1
I_C/I_B = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 V_CE = 5 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
http://onsemi.com
7