SBC807-25LT1G Datasheet, PDF (2/10 Pages) ON Semiconductor – General Purpose Transistors

BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mA)
Collector −Emitter Breakdown Voltage
(V_EB = 0, I_C = −10 mA)
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
Collector Cutoff Current
(V_CB = −20 V)
(V_CB = −20 V, T_J = 150°C)
ON CHARACTERISTICS
DC Current Gain
(I_C = −100 mA, V_CE = −1.0 V)
(I_C = −500 mA, V_CE = −1.0 V)
Collector −Emitter Saturation Voltage
(I_C = −500 mA, I_B = −50 mA)
Base −Emitter On Voltage
(I_C = −500 mA, I_B = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
Symbol
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
I_CBO
h_FE
V_CE(sat)
V_BE(on)
f_T
C_obo
Min
Typ
Max
−45
−
−
−50
−
−
−5.0
−
−
−
−
−100
−
−
−5.0
100
−
250
160
−
400
250
−
600
40
−
−
−
−
−0.7
−
−
−1.2
100
−
−
−
10
−
Unit
V
V
V
nA
mA
−
V
V
MHz
pF
ORDERING INFORMATION
Device
BC807−16LT1G
SBC807−16LT1G
BC807−16LT3G
SBC807−25LT1G
BC807−25LT1G
SBC807−25LT1G
BC807−25LT3G
SBC807−25LT3G
BC807−40LT1G
SBC807−40LT1G
BC807−40LT3G
Specific Marking
5A1
5A1
5B1
5B1
5C
5C
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping^†
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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