MUN5332DW1 Datasheet, PDF (7/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC143EPDP6
1
I_C/I_B = 10
25C
0.1
150C
1000
100
10
25C
150C
−55C
0.01
0
7
6
5
4
3
2
1
0
0
−55C
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) vs. I_C
1
0.1
50
0.1
V_CE = 10 V
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
f = 10 kHz
I_E = 0 A
T_A = 25C
100
150C
10
1
25C
−55C
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 19. Output Capacitance
0.1
V_O = 5 V
0.01
50
0
1
2
3
4
5
6
7
V_in, INPUT VOLTAGE (V)
Figure 20. Output Current vs. Input Voltage
100
25C
10
−55C
1
150C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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